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| MUR120120 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 MUR120120 VRSM V 1200 VRRM V 1200 Symbol IFRMS IFAVM IFAV IFRM Test Conditions TVJ=TVJM TC=60oC; rectangular, d=0.5 TC=95oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 109 75 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 357 0.8...1.2 6 W Nm g MUR120120 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=70A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 3 1.5 20 1.55 1.8 1.2 4.6 0.35 0.25 35 Unit IR mA VF VTO rT RthJC RthCK RthJA trr IRM V V m K/W IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=350V; IF=75A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 40 25 60 30 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR120120 Ultra Fast Recovery Diodes 150 A 125 IF 100 TVJ=150C 16 T = 100C VJ uC V = 600V 14 R Qr 12 10 8 TVJ=100C IF=140A IF= 70A IF= 35A 120 TVJ= 100C A VR = 600V 100 IRM 80 60 40 20 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt IF=140A IF= 70A IF= 35A 75 50 TVJ= 25C 6 4 2 0 100 25 0 0.0 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 ns 450 trr 400 TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 tfr VFR TVJ= 100C IF = 100A 1.4 1.5 us tfr 1.0 1.2 Kf 1.0 IRM 350 300 0.8 IF=140A IF= 70A IF= 35A 30 20 10 0 0.0 1000 A/us 0.5 0.6 Qr 250 200 0 40 80 120 C 160 TVJ 0 200 400 600 A/us 1000 800 -diF/dt 0.4 0 200 400 600 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.017 0.0184 0.1296 0.185 ti (s) 0.00038 0.0026 0.0387 0.274 D=0.7 0.5 ZthJC 0.1 0.3 0.2 0.01 0.05 Single Pulse 1 2 3 4 0.01 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal resistance junction to case |
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